CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS

[1] HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 34 - 36

[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5236 - 5243

[4] CONTACT CURRENTS IN SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097

[5] OPTICAL PROPERTIES OF COPPER AND GOLD IN VACUUM ULTRA-VIOLET [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (547P): : 1007 - &

[6] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +

[7] Berning PH, 1963, PHYS THIN FILMS, V1, P69

[8] BORN M, 1964, PRINCIPLES OPTICS, pCH1

[9] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &

[10] CHU TL, 1967, J ELECTROCHEM SOC, V114, P171

[1] HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 34 - 36

[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 94 - 96

[3] TRANSIENT CONDUCTION IN INSULATORS AT HIGH FIELDS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5236 - 5243

[4] CONTACT CURRENTS IN SILICON-NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097

[5] OPTICAL PROPERTIES OF COPPER AND GOLD IN VACUUM ULTRA-VIOLET [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (547P): : 1007 - &

[6] PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 573 - +

[7] Berning PH, 1963, PHYS THIN FILMS, V1, P69

[8] BORN M, 1964, PRINCIPLES OPTICS, pCH1

[9] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &

[10] CHU TL, 1967, J ELECTROCHEM SOC, V114, P171