CONDUCTION PROCESSES IN SILICON NITRIDE

被引：34

作者：

KENDALL, EJM

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1968年 / 46卷 / 22期

关键词：

D O I：

10.1139/p68-611

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2509 / &

共 21 条

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[3]

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[5] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

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[6] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[7]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[8] A NOTE ON THE ANALYSIS OF 1ST-ORDER GLOW CURVES [J].

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[9]

HOOGENSTRAATEN H, 1958, PHILIPS RES REP, V13, P515

[10]

KENDALL EJM, 1968, BRIT J APPL PHYS, V1, P1303

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