HIGH-FIELD CONDUCTION PROCESSES IN SILICON-NITRIDE FILMS IN PRESENCE OF CHARGE TRAPPING

被引：8

作者：

POPOVA, LI ^{[1
]}

ANTOV, BZ ^{[1
]}

VITANOV, PK ^{[1
]}

机构：

[1] INST MICROELECTR,SOFIA 1113,BULGARIA

来源：

THIN SOLID FILMS | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90428-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：157 / 160

页数：4

共 10 条

[1] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
BROWN, GA
ROBINETT.WC
CARLSON, HG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 948 - &
[2] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE
GINOVKER, AS
GRITSENKO, VA
SINITSA, SP
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 489 - 495
[3] HOPPING CONDUCTION IN AMORPHOUS SOLIDS
HILL, RM
[J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (192): : 1307 - &
[4] HYSTERESIS AND MEMORY PROPERTIES OF SILICON-SILICON NITRIDE SYSTEM
KENDALL, EJM
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (09) : 791 - &
[5] CONDUCTION IN AMORPHOUS THIN-FILMS OF SILICON-NITRIDE UNDER NONUNIFORM ELECTRIC-FIELDS
SULLIVAN, L
CARD, HC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (11) : 1531 - 1539
[6] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2951 - +
[7] EFFECTS OF BULK TRAPPING ON MEMORY CHARACTERISTICS OF THICK OXIDE MNOS VARIABLE-THRESHOLD CAPACITORS
TAYLOR, GW
SIMMONS, JG
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (01) : 1 - 10
[8] BIAS-TEMPERATURE-STRESS STUDIES OF CHARGE RETENTION IN DUAL-DIELECTRIC, CHARGE-STORAGE CELLS
THORNBER, KK
KAHNG, D
NEPPELL, CT
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09): : 1741 - 1770
[9] METHOD FOR DETERMINATION OF HIGH-FIELD CONDUCTION LAWS IN INSULATING FILMS IN PRESENCE OF CHARGE TRAPPING
WALDEN, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1178 - +
[10] POOLE-FRENKEL WITH COMPENSATION PRESENT
YEARGAN, JR
TAYLOR, HL
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5600 - &

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