METHOD FOR DETERMINATION OF HIGH-FIELD CONDUCTION LAWS IN INSULATING FILMS IN PRESENCE OF CHARGE TRAPPING

被引：105

作者：

WALDEN, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.1661233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1178 / +

页数：1

共 21 条

[1] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[2] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[3] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :222-+

[4] STABILIZATION OF MOS DEVICES [J].

HOFSTEIN, SR .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :657-+

[5] ELECTRICAL CONDUCTION IN NON-METALLIC AMORPHOUS FILMS [J].

JONSCHER, AK ;

WALLEY, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :662-&

[6] SEMIPERMANENT MEMORY USING CAPACITOR CHARGE STORAGE AND IGFET READ-OUT [J].

KAHNG, D .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1296-+

[7] VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J].

LAMPERT, MA .

REPORTS ON PROGRESS IN PHYSICS, 1964, 27 :329-367

[8] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[9] THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING [J].

MANY, A ;

RAKAVY, G .

PHYSICAL REVIEW, 1962, 126 (06) :1980-&

[10] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J].

NICOLLIAN, EH ;

BERGLUND, CN .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3052-+

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