AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES

被引：121

作者：

NICOLLIAN, EH

BERGLUND, CN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 07期

关键词：

D O I：

10.1063/1.1659364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3052 / +

页数：1

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