HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON

被引：162

作者：

BARTELINK, D

MOLL, JL

MEYER, NI

机构：

来源：

PHYSICAL REVIEW | 1963年 / 130卷 / 03期

关键词：

D O I：

10.1103/PhysRev.130.972

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：972 / +

页数：1

共 12 条

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[9]

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[10] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J].

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PHYSICAL REVIEW, 1962, 126 (06) :2002-&

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