PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON

被引：759

作者：

SHOCKLEY, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1961年 / 2卷 / 01期

关键词：

D O I：

10.1016/0038-1101(61)90054-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：35 / +

页数：1

相关论文

共 48 条

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[2] Antoncik E, 1957, CZECH J PHYS, V7, P674
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[7] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
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[8] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON
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[J]. PHYSICAL REVIEW, 1957, 108 (01): : 29 - 34
[9] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[10] UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS
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[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1161 - 1165

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