ELECTRON EMISSION FROM SILICON P-N JUNCTIONS

被引：27

作者：

SENITZKY, P

机构：

来源：

PHYSICAL REVIEW | 1959年 / 116卷 / 04期

关键词：

D O I：

10.1103/PhysRev.116.874

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：874 / 879

页数：6

共 12 条

[1] ALLEN JS, 1947, REV SCI INSTR, V18, P730
[2] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
BURTON, JA
[J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343
[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
CHYNOWETH, AG
MCKAY, KG
[J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376
[4] THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON
CHYNOWETH, AG
MCKAY, KG
[J]. PHYSICAL REVIEW, 1957, 108 (01): : 29 - 34
[5] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON
CHYNOWETH, AG
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540
[6] AVALANCHE BREAKDOWN IN SILICON
MCKAY, KG
[J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884
[7] VISIBLE LIGHT FROM A SILICON P-N JUNCTION
NEWMAN, R
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703
[8] SILICON P-N-JUNCTION ALLOY DIODES
PEARSON, GL
SAWYER, B
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351
[9] SENITZKY B, UNPUBLISHED
[10] HOT ELECTRONS IN GERMANIUM AND OHMS LAW
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04): : 990 - 1034