HYSTERESIS AND MEMORY PROPERTIES OF SILICON-SILICON NITRIDE SYSTEM

被引：12

作者：

KENDALL, EJM

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(71)80004-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：791 / &

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