CONDUCTION IN AMORPHOUS THIN-FILMS OF SILICON-NITRIDE UNDER NONUNIFORM ELECTRIC-FIELDS

被引：20

作者：

SULLIVAN, L ^{[1
]}

CARD, HC ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECTR ENGN & ELECTR,MANCHESTER M60 1QD,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1974年 / 7卷 / 11期

关键词：

D O I：

10.1088/0022-3727/7/11/314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1531 / 1539

页数：9

共 14 条

[1]

BALK P, 1974, 3 P EUR SOL STAT DEV

[2]

CARD HC, 1973, SOLID STATE ELECTRON, P51

[3] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

CHU, TL ;

LEE, CH ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&

[4]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[5] PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE [J].

GOODMAN, AM .

APPLIED PHYSICS LETTERS, 1968, 13 (08) :275-&

[6] NON-EQUILIBRIUM C-V AND I-V CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].

HIELSCHER, FH ;

PREIER, HM .

SOLID-STATE ELECTRONICS, 1969, 12 (07) :527-+

[7]

Jonscher A. K., 1967, THIN SOLID FILMS, V1, P213

[8] THE THEORY OF IMPURITY CONDUCTION [J].

MOTT, NF ;

TWOSE, WD .

ADVANCES IN PHYSICS, 1961, 10 (38) :107-163

[9]

MOTT NF, 1971, ELECTRONIC PROCESSES

[10] CRITERION FOR DETERMINING ORIGIN OF OHMIC CURRENTS IN INSULATORS [J].

SCHER, H ;

PAI, D ;

MORT, J .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2908-2909

← 1 2 →