STRUCTURAL DAMAGE PRODUCED IN INP(100) SURFACES BY PLASMA-EMPLOYING DEPOSITION TECHNIQUES

被引：23

作者：

DAUTREMONTSMITH, WC

FELDMAN, LC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573335

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：873 / 878

页数：6

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共 24 条

[1] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS
BARKER, RA
MAYER, TM
BURTON, RH
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 583 - 586
[2] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64
[3] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES
CHANG, RPH
CHANG, CC
DARACK, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50
[4] SURFACE MODIFICATION OF INP BY PLASMA TECHNIQUES USING HYDROGEN AND OXYGEN
CLARK, DT
FOK, T
[J]. THIN SOLID FILMS, 1981, 78 (03) : 271 - 278
[5] SURFACE STRUCTURAL DAMAGE PRODUCED IN INP(100) BY RF PLASMA OR SPUTTER DEPOSITION
DAUTREMONTSMITH, WC
FELDMAN, LC
[J]. THIN SOLID FILMS, 1983, 105 (02) : 187 - 196
[6] A NONALLOYED, LOW SPECIFIC RESISTANCE OHMIC CONTACT TO N-INP
DAUTREMONTSMITH, WC
BARNES, PA
STAYT, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 620 - 625
[7] DAUTREMONTSMITH WC, 1982, UNPUB
[8] DAUTREMONTSMITH WC, 1983, UNPUB
[9] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
DONNELLY, VM
FLAMM, DL
TU, CW
IBBOTSON, DE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537
[10] SIMS EVALUATION OF CONTAMINATION ON ION-CLEANED (100) INP SUBSTRATES
DOWSETT, MG
KING, RM
PARKER, EHC
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (08) : 529 - 531