A NONALLOYED, LOW SPECIFIC RESISTANCE OHMIC CONTACT TO N-INP

被引：28

作者：

DAUTREMONTSMITH, WC

BARNES, PA

STAYT, JW

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：620 / 625

页数：6

共 25 条

[1] ALLOYED TIN-GOLD OHMIC CONTACTS TO N-TYPE INDIUM-PHOSPHIDE [J].

BARNES, PA ;

WILLIAMS, RS .

SOLID-STATE ELECTRONICS, 1981, 24 (10) :907-913

[2]

BARNES PA, 1983, UNPUB

[3] METALLURGICAL BEHAVIOR OF GOLD-BASED OHMIC CONTACTS TO THE INP/INGAASP MATERIAL SYSTEM [J].

CAMLIBEL, I ;

CHIN, AK ;

ERMANIS, F ;

DIGIUSEPPE, MA ;

LOURENCO, JA ;

BONNER, WA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2585-2590

[4]

Chin A. K., 1982, Materials Letters, V1, P19, DOI 10.1016/0167-577X(82)90032-5

[5] THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS [J].

CHIN, AK ;

ZIPFEL, CL ;

ERMANIS, F ;

MARCHUT, L ;

CAMLIBEL, I ;

DIGIUSEPPE, MA ;

CHIN, BH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :304-310

[6] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[7] SURFACE STRUCTURAL DAMAGE PRODUCED IN INP(100) BY RF PLASMA OR SPUTTER DEPOSITION [J].

DAUTREMONTSMITH, WC ;

FELDMAN, LC .

THIN SOLID FILMS, 1983, 105 (02) :187-196

[8]

DAUTREMONTSMITH WC, UNPUB

[9]

DAUTREMONTSMITH WC, 1982, UNPUB

[10] SIMS EVALUATION OF CONTAMINATION ON ION-CLEANED (100) INP SUBSTRATES [J].

DOWSETT, MG ;

KING, RM ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1977, 31 (08) :529-531

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