SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS

被引：63

作者：

BARKER, RA ^{[1
]}

MAYER, TM ^{[1
]}

BURTON, RH ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.93188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：583 / 586

页数：4

共 17 条

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[3] BURTON RH, UNPUB J ELECTROCHEM
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[9] REACTIVE ION ETCHING OF GAAS IN CCL2F2
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GREENE, JE
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[10] KUBASCHEWSKI O, 1958, METALLURGICAL THERMO, P326