GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET

被引：111

作者：

COLDREN, LA

IGA, K

MILLER, BI

RENTSCHLER, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.92050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：681 / 683

页数：3

共 20 条

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[8]

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[9]

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