ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M

被引：169

作者：

HSIEH, JJ ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 05期

关键词：

D O I：

10.1063/1.88736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：283 / 285

页数：3

共 13 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577

[2]

ASTLES MG, 1973, J ELECTROCHEM SOC, V120, P1751

[3] GROWTH OF INP CRYSTALS FROM MELT [J].

BACHMANN, KJ ;

BUEHLER, E .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) :279-302

[4]

Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[5] TRANSMISSION PROPERTIES OF A LOW-LOSS NEAR-PARABOLIC-INDEX FIBER [J].

COHEN, LG ;

KAISER, P ;

MACCHESNEY, JB ;

OCONNOR, PB ;

PRESBY, HM .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :472-474

[6] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK) [J].

HITCHENS, WR ;

HOLONYAK, N ;

WRIGHT, PD ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :245-247

[7]

HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[8] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

MOON, RL ;

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) :635-644

[9] LOW-THRESHOLD ROOM-TEMPERATURE DOUBLE-HETEROSTRUCTURE GAAS1-XSBX-ALYGA1-YAS1-XSBX INJECTION LASERS AT 1-MU-M WAVELENGTHS [J].

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :562-564

[10] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU [J].

NUESE, CJ ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1975, 26 (09) :528-531

← 1 2 →