BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION

被引：255

作者：

MOON, RL ^{[1
]}

ANTYPAS, GA ^{[1
]}

JAMES, LW ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP RES LABS,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1007/BF02655291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：635 / 644

页数：10

共 16 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS
ANTYPAS, GA
MOON, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577
[2] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX
ANTYPAS, GA
YEP, TO
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3201 - &
[3] ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48
[4] GIESECKE G, 1966, SEMICONDUCTORS SEMIM, V2
[5] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[6] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP
JAMES, LW
ANTYPAS, GA
MOON, RL
EDGECUMBE, J
BELL, RL
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 270 - 271
[7] Kromer H., 1963, P IEEE, V51, P1782
[8] LORENZ MR, 1970, 10 P INT C PHYS SEM, P444
[9] MILLER EK, 1964, J APPL PHYS, V35, P1233
[10] Onton A., 1973, Journal of Luminescence, V7, P95, DOI 10.1016/0022-2313(73)90061-6