GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX

[1] SPONTANEOUS + STIMULATED INFRA-RED EMISSION FROM INDIUM PHOSPHIDE ARSENIDE DIODES ( IN )P AS) DIODES SPONTANEOUS + STIMULATED INFRARED EMISSION 77 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 13 - &

[2] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[3] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2165 - &

[4] ANTYPAS GA, UNPUBLISHED

[5] MISCHKRISTALLBILDUNG BEI AIII BV-VERBINDUNGEN [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (06): : 502 - 503

[6] ILEGEMS M, 1969, 1968 P S GAAS, P3

[7] LONG D, 1966, PHYSICS 3 4 COMPOUND, V1, P143

[8] MASER ACTION IN INAS DIODES [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 176 - 178

[9] NELSON H, 1963, RCA REV, V24, P603

[10] PREPARATION OF HOMOGENEOUS AND REPRODUCIBLE SOLID SOLUTIONS OF GAP-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 426 - +

[1] SPONTANEOUS + STIMULATED INFRA-RED EMISSION FROM INDIUM PHOSPHIDE ARSENIDE DIODES ( IN )P AS) DIODES SPONTANEOUS + STIMULATED INFRARED EMISSION 77 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 13 - &

[2] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1393 - &

[3] LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2165 - &

[4] ANTYPAS GA, UNPUBLISHED

[5] MISCHKRISTALLBILDUNG BEI AIII BV-VERBINDUNGEN [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (06): : 502 - 503

[6] ILEGEMS M, 1969, 1968 P S GAAS, P3

[7] LONG D, 1966, PHYSICS 3 4 COMPOUND, V1, P143

[8] MASER ACTION IN INAS DIODES [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 176 - 178

[9] NELSON H, 1963, RCA REV, V24, P603

[10] PREPARATION OF HOMOGENEOUS AND REPRODUCIBLE SOLID SOLUTIONS OF GAP-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 426 - +