PREPARATION OF HOMOGENEOUS AND REPRODUCIBLE SOLID SOLUTIONS OF GAP-GAAS

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] MISCHKRISTALLBILDUNG BEI AIII BV-VERBINDUNGEN [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (06): : 502 - 503

[3] GATOS HC, 1960, SURFACE CHEMISTRY ME

[4] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[5] GALVANOMAGNETIC EFFECTS IN A SEMICONDUCTOR WITH 2 SETS OF SPHEROIDAL ENERGY SURFACES [J]. PHYSICAL REVIEW, 1956, 102 (06): : 1496 - 1501

[6] HERMAN F, 1957, PROGRESS SEMICONDUCT

[7] HOLONYAK N, 1961, METALLURGY SEMICONDU

[8] HULL EM, 1963, ELECTROCHEM SOC EXTE, V12, P43

[9] KOSTER W, 1955, Z METALLKD, V46, P293

[10] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] MISCHKRISTALLBILDUNG BEI AIII BV-VERBINDUNGEN [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1955, 10 (06): : 502 - 503

[3] GATOS HC, 1960, SURFACE CHEMISTRY ME

[4] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[5] GALVANOMAGNETIC EFFECTS IN A SEMICONDUCTOR WITH 2 SETS OF SPHEROIDAL ENERGY SURFACES [J]. PHYSICAL REVIEW, 1956, 102 (06): : 1496 - 1501

[6] HERMAN F, 1957, PROGRESS SEMICONDUCT

[7] HOLONYAK N, 1961, METALLURGY SEMICONDU

[8] HULL EM, 1963, ELECTROCHEM SOC EXTE, V12, P43

[9] KOSTER W, 1955, Z METALLKD, V46, P293

[10] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995