LOW-THRESHOLD ROOM-TEMPERATURE DOUBLE-HETEROSTRUCTURE GAAS1-XSBX-ALYGA1-YAS1-XSBX INJECTION LASERS AT 1-MU-M WAVELENGTHS

被引：42

作者：

NAHORY, RE ^{[1
]}

POLLACK, MA ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 10期

关键词：

D O I：

10.1063/1.88287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：562 / 564

页数：3

共 15 条

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[3]

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HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[7] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

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[9] HIGHLY UNIFORM ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS AND THEIR CHARACTERISTICS AT ROOM TEMPERATURE [J].

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[10] GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS [J].

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