ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU

被引：31

作者：

NUESE, CJ ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 09期

关键词：

D O I：

10.1063/1.88244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：528 / 531

页数：4

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共 18 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] ENSTROM RE, TO BE PUBLISHED
[3] ENSTROM RE, 1971, 3 P INT S GALL ARS R, P30
[4] ENSTROM RE, 1973, 4 P INT S GALL ARS R, P37
[5] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS
ETTENBERG, M
NUESE, CJ
APPERT, JR
GANNON, JJ
ENSTROM, RE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66
[6] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &
[7] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS
KRESSEL, H
LOCKWOOD, HF
BUTLER, JK
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4095 - 4097
[8] LOW-THRESHOLD LOC GAAS INJECTION LASERS
KRESSEL, H
LOCKWOOD, HF
HAWRYLO, FZ
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (02) : 43 - &
[9] ROOM-TEMPERATURE LASER OPERATION OF INXGA1-X AS P-N-JUNCTIONS
NUESE, CJ
ENSTROM, RE
ETTENBER.M
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 83 - 85
[10] VAPOR GROWTH OF IN1-XGAXP FOR P-N-JUNCTION ELECTROLUMINESCENCE .2. LUMINESCENCE CHARACTERISTICS
NUESE, CJ
SIGAI, AG
ABRAHAMS, MS
GANNON, JJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 956 - 965