METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS

被引：30

作者：

ETTENBERG, M ^{[1
]}

NUESE, CJ ^{[1
]}

APPERT, JR ^{[1
]}

GANNON, JJ ^{[1
]}

ENSTROM, RE ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 01期

关键词：

D O I：

10.1007/BF02657835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：37 / 66

页数：30

相关论文

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[9] OPTICAL-PROPERTIES OF VAPOR-GROWN INXGA1-X AS EPITAXIAL-FILMS ON GAAS AND INXGA1-XP SUBSTRATES
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[10] ENSTROM RE, UNPUBLISHED RESULTS

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