METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS

被引：30

作者：

ETTENBERG, M ^{[1
]}

NUESE, CJ ^{[1
]}

APPERT, JR ^{[1
]}

GANNON, JJ ^{[1
]}

ENSTROM, RE ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 01期

关键词：

D O I：

10.1007/BF02657835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：37 / 66

页数：30

相关论文

共 32 条

[21] EFFICIENT LPE-GROWN INXGA1-XAS LEDS AT 1-1.1-MUM WAVELENGTHS
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[J]. APPLIED PHYSICS LETTERS, 1974, 25 (03) : 146 - 148
[22] Nuese C. J., 1973, 1973 International Electron Devices Meeting Technical Digest, P320, DOI 10.1109/IEDM.1973.188719
[23] ROOM-TEMPERATURE LASER OPERATION OF INXGA1-X AS P-N-JUNCTIONS
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 83 - 85
[24] NUESE CJ, 1968, T METALL SOC AIME, V242, P400
[25] VAPOR-GROWN IN1-X GAXP ELECTROLUMINESCENT JUNCTIONS ON GAAS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) : 51 - 78
[26] CW LASER-DIODES AND HIGH-POWER ARRAYS OF INXGA1-XAS FOR 1.06-MUM EMISSION
NUESE, CJ
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KRESSEL, H
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (05) : 224 - 227
[27] NUESE CJ, 1972, IEEE T ELECTRON DEVI, VED19, P1067
[28] OLSEN GH, TO BE PUBLISHED
[29] VAPOR GROWTH OF IN1-XGAXP FOR P-N-JUNCTION ELECTROLUMINESCENCE .1. MATERIAL PREPARATION
SIGAI, AG
NUESE, CJ
ENSTROM, RE
ZAMEROWSKI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 947 - 955
[30] MONOLITHIC INTEGRATED INXGA1-XAS SCHOTTKY-BARRIER WAVEGUIDE PHOTODETECTOR
STILLMAN, GE
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[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 36 - 38

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