CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[2] ASTLES MG, 1973, J ELECTROCHEM SOC, V120, P175

[3] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[4] HASS M, 1968, LATTICE REFRACTION S, V3, P12

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[7] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[8] CARRIER LIFETIME MEASUREMENT OF A JUNCTION LASER USING DIRECT MODULATION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) : 148 - +

[9] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (07) : 120 - &

[10] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) : 2003 - 2004

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[2] ASTLES MG, 1973, J ELECTROCHEM SOC, V120, P175

[3] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746

[4] HASS M, 1968, LATTICE REFRACTION S, V3, P12

[5] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

[7] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[8] CARRIER LIFETIME MEASUREMENT OF A JUNCTION LASER USING DIRECT MODULATION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) : 148 - +

[9] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (07) : 120 - &

[10] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) : 2003 - 2004