CARRIER LIFETIME MEASUREMENT OF A JUNCTION LASER USING DIRECT MODULATION

被引：44

作者：

IKEGAMI, T

SUEMATSU, Y

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1968年 / QE 4卷 / 04期

关键词：

D O I：

10.1109/JQE.1968.1075053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：148 / +

页数：1

共 8 条

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (08) :219-+

[7] EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J].

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BLUM, S .

SOLID-STATE ELECTRONICS, 1964, 7 (12) :905-909

[8]

SUSAKI W, 1967 TECHN M QUANT E

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