EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS

被引：79

作者：

PILKUHN, M

RUPPRECHT, H

BLUM, S

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 12期

关键词：

D O I：

10.1016/0038-1101(64)90069-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：905 / 909

页数：5

共 15 条

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PHYSICS LETTERS, 1963, 4 (06) :330-331

[2] ROOM-TEMPERATURE STIMULATED EMISSION [J].

BURNS, G ;

NATHAN, MI .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :72-73

[3] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J].

BURNS, G ;

DILL, FH ;

NATHAN, MI .

PROCEEDINGS OF THE IEEE, 1963, 51 (06) :947-&

[4]

BURNS GT, UNPUB

[5] MEASUREMENT OF AMPLIFICATION IN A GAAS INJECTION LASER [J].

COUPLAND, MJ ;

HAMBLETON, KG ;

HILSUM, C .

PHYSICS LETTERS, 1963, 7 (04) :231-232

[6] SMALL-SIGNAL AMPLIFICATION IN GAAS LASERS - GAAS LASER DIODES SMALL SIGNAL AMPLIFICATION TRAVELING WAVE AMPLIFICATION 77 DEGREES K E/T [J].

CROWE, JW ;

CRAIG, RM .

APPLIED PHYSICS LETTERS, 1964, 4 (03) :57-&

[7] TEMPERATURE EFFECTS IN COHERENT GAAS DIODES [J].

ENGELER, WE ;

GARFINKEL, M .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2746-&

[8] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[9] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

LASHER, GJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :58-61

[10] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS [J].

PILKUHN, M ;

RUPPRECHT, H .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1243-&

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