CHARACTERISTICS OF THE LOW-TEMPERATURE-DEPOSITED SIO2-GA0.47IN0.53AS METAL-INSULATOR SEMICONDUCTOR INTERFACE

被引：39

作者：

GARDNER, PD

NARAYAN, SY

YUN, YH

机构：

来源：

THIN SOLID FILMS | 1984年 / 117卷 / 03期

关键词：

D O I：

10.1016/0040-6090(84)90285-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：173 / 190

页数：18

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