BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS

被引：71

作者：

GREENE, PD ^{[1
]}

WHEELER, SA ^{[1
]}

ADAMS, AR ^{[1
]}

ELSABBAHY, AN ^{[1
]}

AHMAD, CN ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice-matched and nominally undoped layers of In1-xGa xAsyP1-y were grown by liquid-phase epitaxy on semi-insulating (100) InP substrates. The background carrier concentration for a range of compositions was about 2×1016 cm-3 when unbaked melts were used, but with prebaking 2.8×1015 cm -3 was achieved. The electron mobility data, obtained over the temperature range 77-300 K using magnetic fields up to 9 T, have been interpreted in terms of polar-optical phonon, alloy, and ionized impurity scattering. For midrange alloys of this purity, alloy scattering was found to be more significant than ionized impurity scattering. The alloy scattering potential is about 0.6 eV for alloys with y=0.5.

引用

页码：78 / 80

页数：3

共 8 条

[1]

Brooks H., 1955, ADV ELECTRON, V7, P85

[2] ELECTRON MOBILITY OF INDIUM ARSENIDE PHOSPHIDE [IN(ASYP1-Y)] [J].

EHRENREICH, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (01) :97-104

[3] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[4] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH ;

FERRY, DK ;

HARRISON, JW .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :107-114

[5]

LITTLEJOHN MA, 7TH P INT S GAAS REL

[6]

NICHOLAS RJ, COMMUNICATION

[7] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[8] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98

← 1 →