IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES

被引：135

作者：

YAMAMOTO, T ^{[1
]}

SAKAI, K ^{[1
]}

AKIBA, S ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1978年 / 14卷 / 02期

关键词：

D O I：

10.1109/JQE.1978.1069753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / 98

页数：4

共 21 条

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[7] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].

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[8]

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[9] PROPOSAL ON OPTICAL FIBER TRANSMISSION-SYSTEMS IN A LOW-LOSS 1.0-1.4 MU-M WAVELENGTH REGION [J].

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[10]

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