HIGH-TEMPERATURE OPERATION OF STRAINED SI0.65GE0.35/SI(111) P-TYPE MULTIPLE-QUANTUM-WELL LIGHT-EMITTING DIODE GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY

被引：34

作者：

FUKATSU, S ^{[1
]}

USAMI, N ^{[1
]}

SHIRAKI, Y ^{[1
]}

NISHIDA, A ^{[1
]}

NAKAGAWA, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,1-280 HIGASHI KOIGAKUBO,KOKUBUNJI,TOKYO 182,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence (EL) was observed at temperatures up to 60-degrees-C in p-type strained Si0.65Ge0.35/Si multiple-quantum-well (MQW) diode structures grown on Si (111) substrates by Si molecular-beam epitaxy. No-phonon line and its transverse optical phonon replica were well-resolved in the room-temperature EL spectrum for the first time. EL spectrum was dominated by a broad alloy band located below the band-edge state by almost-equal-to 100 meV at lower temperatures, which was taken over by clear band-edge emissions at elevated temperatures. The emission intensity of the alloy band exhibited a saturation behavior with increasing injection current while the band-edge emission was found to develop with a power exponent of 1.4.

引用

页码：967 / 969

页数：3

共 17 条

[1] SYSTEMATIC BLUE SHIFT OF EXCITON LUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY
FUKATSU, S
YOSHIDA, H
USAMI, N
FUJIWARA, A
TAKAHASHI, Y
SHIRAKI, Y
ITO, R
[J]. THIN SOLID FILMS, 1992, 222 (1-2) : 1 - 4
[2] ELECTROLUMINESCENCE FROM STRAINED SIGE/SI QUANTUM-WELL STRUCTURES GROWN BY SOLID SOURCE SI MOLECULAR-BEAM EPITAXY
FUKATSU, S
USAMI, N
CHINZEI, T
SHIRAKI, Y
NISHIDA, A
NAKAGAWA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (8A): : L1015 - L1017
[3] PHOTOGENERATION AND TRANSPORT OF CARRIERS IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES
FUKATSU, S
USAMI, N
SHIRAKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (11A): : L1525 - L1528
[4] FUKATSU S, UNPUB
[5] FUKATSU S, 1992, JPN J APPL PHYS, V31, pL1017
[6] B DOPING EFFECT ON REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION DURING GAS SOURCE SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH
HIRAYAMA, H
KOYAMA, K
HIROI, M
TATSUMI, T
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (08) : 780 - 782
[7] HOUGHTON DC, 1991, MATER RES SOC SYMP P, V220, P299, DOI 10.1557/PROC-220-299
[8] HIGH QUANTUM EFFICIENCY PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI1-XGEX
LENCHYSHYN, LC
THEWALT, MLW
STURM, JC
SCHWARTZ, PV
PRINZ, EJ
ROWELL, NL
NOEL, JP
HOUGHTON, DC
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (25) : 3174 - 3176
[9] OBSERVATION OF ELECTROLUMINESCENCE FROM PSEUDOMORPHIC SI1-XGEX ALLOY LAYERS
MANTZ, U
THONKE, K
SAUER, R
KASPER, E
KIBBEL, H
SCHAFFLER, F
HERZOG, HJ
[J]. THIN SOLID FILMS, 1992, 222 (1-2) : 94 - 97
[10] ROOM-TEMPERATURE 1.3-MU-M ELECTROLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS
MI, Q
XIAO, X
STURM, JC
LENCHYSHYN, LC
THEWALT, MLW
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (25) : 3177 - 3179

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