EFFECTS OF PLASMA-SUBSTRATE DISTANCE ON PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED FROM HYDROGEN-DILUTED SILANE

被引：10

作者：

KAWASE, M ^{[1
]}

MASUDA, T ^{[1
]}

NAGASHIMA, M ^{[1
]}

MAKI, T ^{[1
]}

MIYAMOTO, Y ^{[1
]}

HASHIMOTO, K ^{[1
]}

机构：

[1] NIPPON STEEL CORP LTD,FUTURE & FRONTIER FIELD RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7A期

关键词：

HYDROGENATED AMORPHOUS SILICON; HYDROGENATED MICROCRYSTALLINE SILICON; RF PLASMA CHEMICAL VAPOR DEPOSITION; HYDROGEN DILUTION; PHOTOCONDUCTIVITY;

D O I：

10.1143/JJAP.33.3830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) was prepared on substrates located away from rf plasma of hydrogen-diluted silane at 3 Torr. Physical and chemical structures of the films were changed by altering the distance between the plasma and the substrates. An optimum separation distance between the plasma and the substrates was found. The effects of substrate temperature and hydrogen dilution on film properties were also examined. The changes in film properties were explained by taking into account three types of film precursors: favorable radicals of lower sticking probability, unfavorable sticky ones and unfavorable polymerized ones.

引用

页码：3830 / 3836

页数：7

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