SPATIAL-DISTRIBUTION OF SIH3 RADICALS IN RF SILANE PLASMA

被引：142

作者：

ITABASHI, N

NISHIWAKI, N

MAGANE, M

NAITO, S

GOTO, T

MATSUDA, A

YAMADA, C

HIROTA, E

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 03期

关键词：

Amorphous silicon thin film; Infrared diode laser absorption spectroscopy (IRLAS); Plasma CVD; RF silane plasma; SiH3 radical density; Spatial distribution of SiH[!sub]3[!/sub;

D O I：

10.1143/JJAP.29.L505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared diode laser absorption spectroscopy (IRLAS) was applied to the measurement of SiH3 in a RF silane P-CVD chamber with parallel plate electrodes. The spatial distribution of SiH3 radicals between the electrodes was measured to obtain the incident flux density of SiH3 to the electrode surface. The growth rate of a-Si:H was also measured in the same plasma. These data were used to estimate the contribution of SiH3 to a-Si:H thin-film growth. © 1990 The Japan Society of Applied Physics.

引用

页码：L505 / L507

页数：3

共 10 条

[1] GEOMETRICAL STRUCTURES, FORCE-CONSTANTS, AND VIBRATIONAL-SPECTRA OF SIH, SIH2, SIH3, AND SIH4 [J].