BAND BENDING MODIFIED TUNNELING AT METAL/CONJUGATED POLYMER INTERFACES

被引:54
作者
ETTEDGUI, E
RAZAFITRIMO, H
GAO, Y
HSIEH, BR
机构
[1] UNIV ROCHESTER,DEPT PHYS & ASTRON,ROCHESTER,NY 14627
[2] XEROX CORP,WEBSTER CTR RES & TECHNOL,WEBSTER,NY 14580
关键词
D O I
10.1063/1.114299
中图分类号
O59 [应用物理学];
学科分类号
摘要
Metal/polymer interfaces play an important role in polymeric light-emitting diodes. Recent transport measurement studies by Parker promote a rigid band model with triangular barrier tunneling at the metal/polymer interface. This finding, however, stands in contradiction to the band bending and Schottky barrier formation observed using surface analytical techniques. We found that this apparent contradiction can be nicely reconciled if a modification of the tunneling model by band bending is included in the interpretation of the transport data. Band bending modified tunneling gives a clear physical picture of the tunneling process across the metal/polymer interface and is important for low field tunneling processes. (C) 1995 American Institute of Physics.
引用
收藏
页码:2705 / 2707
页数:3
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