A MODEL FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL GE AND SI FILMS FROM GEH2 AND SIH2 RADICALS PRODUCED BY UV PHOTOLYSIS OF GEH4 AND SIH4

被引：27

作者：

MOTOOKA, T ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1063/1.336382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2015 / 2018

页数：4

共 22 条

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LUBBEN, D ;

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