A LOW-TEMPERATURE PROCESS FOR THE REACTIVE FORMATION OF SI3N4 LAYERS ON INSB

被引:16
作者
OLCAYTUG, F
RIEDLING, K
FALLMANN, W
机构
关键词
D O I
10.1016/0040-6090(80)90465-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:321 / 324
页数:4
相关论文
共 6 条
[1]  
JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481
[2]  
MILEK JT, 1971, SILICON NITRIDE MI 1
[3]   ALLOYED PLANAR DIODES IN INDIUM-ANTIMONIDE [J].
RIEDLING, K ;
OLCAYTUG, F ;
FALLMANN, W .
ELECTRONICS LETTERS, 1979, 15 (18) :572-573
[4]  
RIEDLING K, 1979, THESIS TU WIEN VIENN
[5]   ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA [J].
SINHA, AK ;
SMITH, TE .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2756-2760
[6]   PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].
SWANN, RCG ;
MEHTA, RR ;
CAUGE, TP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :713-&