MEASUREMENT OF CONCENTRATION DISTRIBUTION OF CHARGE-CARRIERS IN MIDDLE REGION OF ALLOYED SILICON PSN RECTIFIER LOADED FORWARDLY

被引：15

作者：

KRAUSSE, J

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 08期

关键词：

D O I：

10.1016/0038-1101(72)90018-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：841 / &

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共 6 条

[1] GERLACH W, 1969, VORTRAG INT SEMICOND
[2] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 717 - &
[3] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE
HOFFMANN, A
SCHUSTER, K
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724
[4] POTENTIAL AND CARRIER DISTRIBUTIONS OF A P-N-P-N DEVICE IN ON STATE
KOKOSA, RA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1389 - &
[5] ON EFFECTIVE CARRIER LIFETIME IN P-S-N RECTIFIERS AT HIGH INJECTION LEVELS
SCHLANGENOTTO, H
GERLACH, W
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 267 - +
[6] NOTES ON THEORY OF FORWARD CHARACTERISTIC OF POWER RECTIFIERS
SPENKE, E
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1119 - &