ON EFFECTIVE CARRIER LIFETIME IN P-S-N RECTIFIERS AT HIGH INJECTION LEVELS

For a description of the recombination in p+-s-n+ diodes at high injection levels an effective carrier lifetime τeff is introduced, which includes the recombination in the p+ and n+ regions. From general equations, an explicit evaluation of τeff for the conditions of lifetime determination from the stored charge and a discussion of the carrier decay after interrupting the current is given. Assuming a constant high-level lifetime in the base, the obtained dependence of the effective lifetime on the injected carrier density agrees with earlier experiments. Measurements of τeff can be used for a determination of lifetime in the highly-doped layers. © 1969.