P-N-P-N CHARGE DYNAMICS

被引：25

作者：

DAVIES, RL

PETRUZEL.J

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 08期

关键词：

D O I：

10.1109/PROC.1967.5833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1318 / &

共 17 条

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[4]

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[5]

GENTRY FE, 1964, SEMICONDUCTOR CONTRO

[6]

HOERNI JA, 1958, IRE WESCON C REC 3, P172

[7] P+IN+ SILICON DIODES AT HIGH FORWARD CURRENT DENSITIES [J].

HOWARD, NR ;

JOHNSON, GW .

[8]

HUBNER K, 1961, IRE T ELECTRON DEVIC, VED 8, P461

[9] NOTES ON THE THEORY OF 4-LAYER SEMICONDUCTOR SWITCHES [J].

JONSCHER, AK .

[10]

JONSCHER AK, 1960, PRINCIPLES SEMICONDU, P54