P+IN+ SILICON DIODES AT HIGH FORWARD CURRENT DENSITIES

[1] ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM [J]. NATURE, 1962, 194 (4830) : 762 - &

[2] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[3] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[4] HERLET A, 1956, Z NATURF, VA 11, P498

[5] JONSCHER AK, 1958, J ELECT CONTROL, V5, P26

[6] KINMAN TH, 1956, P I ELECTRON ENGRS, VA103, P86

[7] THE FORWARD CHARACTERISTIC OF THE PIN DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 685 - 706

[8] PANY FG, 1962, ELECTROCHEM SOC, V11, P205

[9] SABY JS, 1956, P M SEMICONDUCTORS P, P39

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[1] ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM [J]. NATURE, 1962, 194 (4830) : 762 - &

[2] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[3] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[4] HERLET A, 1956, Z NATURF, VA 11, P498

[5] JONSCHER AK, 1958, J ELECT CONTROL, V5, P26

[6] KINMAN TH, 1956, P I ELECTRON ENGRS, VA103, P86

[7] THE FORWARD CHARACTERISTIC OF THE PIN DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 685 - 706

[8] PANY FG, 1962, ELECTROCHEM SOC, V11, P205

[9] SABY JS, 1956, P M SEMICONDUCTORS P, P39

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842