ELECTRON-HOLE SCATTERING AT HIGH INJECTION-LEVELS IN GERMANIUM

[1] CHAPMAN S, 1951, MATHEMATICAL THEORY

[2] DINGLE RB, 1955, PHILOS MAG, V46, P831

[3] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[4] THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1951, 82 (06): : 977 - 978

[5] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04): : 477 - 483

[1] CHAPMAN S, 1951, MATHEMATICAL THEORY

[2] DINGLE RB, 1955, PHILOS MAG, V46, P831

[3] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[4] THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1951, 82 (06): : 977 - 978

[5] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04): : 477 - 483