MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES

被引：193

作者：

LEDERHANDLER, SR

GIACOLETTO, LJ

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1955年 / 43卷 / 04期

关键词：

D O I：

10.1109/JRPROC.1955.277857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：477 / 483

页数：7

共 13 条

[1] GIACOLETTO LJ, 1954, RCA REV, V15, P506
[2] POST-INJECTION BARRIER ELECTROMOTIVE FORCE OF P-N JUNCTIONS
GOSSICK, BR
[J]. PHYSICAL REVIEW, 1953, 91 (04): : 1012 - 1013
[3] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS
KINGSTON, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834
[4] A DEVELOPMENTAL GERMANIUM P-N-P-JUNCTION TRANSISTOR
LAW, RR
MUELLER, CW
PANKOVE, JI
ARMSTRONG, LD
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1352 - 1357
[5] TRANSIENT RESPONSE OF A P-N JUNCTION
LAX, B
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) : 1148 - 1154
[6] THE EFFECT OF JUNCTION SHAPE AND SURFACE RECOMBINATION ON TRANSISTOR CURRENT GAIN
MOORE, AR
PANKOVE, JI
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06): : 907 - 913
[7] LIFETIME OF INJECTED CARRIERS IN GERMANIUM
NAVON, D
BRAY, R
FAN, HY
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1342 - 1347
[8] RECOMBINATION RATE IN GERMANIUM BY OBSERVATION OF PULSED REVERSE CHARACTERISTIC
PELL, EM
[J]. PHYSICAL REVIEW, 1953, 90 (02): : 278 - 279
[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[10] SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P312