ON THE TRANSIENT BEHAVIOR OF SEMICONDUCTOR RECTIFIERS

[1] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815

[2] EFFECT OF TRANSIT TIME ON GE RECTIFIER BEHAVIOR [J]. PHYSICAL REVIEW, 1953, 91 (04): : 1011 - 1012

[3] FAN HY, 1949, PHYS REV, V75, P1631

[4] POST-INJECTION BARRIER ELECTROMOTIVE FORCE OF P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1953, 91 (04): : 1012 - 1013

[5] GOSSICK BR, 1954, PHYS REV, V94, P1427

[6] GOSSICK BR, 1955, P NATL ELECTRONICS C, V11

[7] GOSSICK BR, 1954, THESIS PURDUE U

[8] JAMES HM, 1947, THEORY SERVOMECHANIS, pCH2

[9] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04): : 477 - 483

[10] LEHMAN G, COMMUNICATION

[1] HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) : 804 - 815

[2] EFFECT OF TRANSIT TIME ON GE RECTIFIER BEHAVIOR [J]. PHYSICAL REVIEW, 1953, 91 (04): : 1011 - 1012

[3] FAN HY, 1949, PHYS REV, V75, P1631

[4] POST-INJECTION BARRIER ELECTROMOTIVE FORCE OF P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1953, 91 (04): : 1012 - 1013

[5] GOSSICK BR, 1954, PHYS REV, V94, P1427

[6] GOSSICK BR, 1955, P NATL ELECTRONICS C, V11

[7] GOSSICK BR, 1954, THESIS PURDUE U

[8] JAMES HM, 1947, THEORY SERVOMECHANIS, pCH2

[9] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04): : 477 - 483

[10] LEHMAN G, COMMUNICATION