SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[2] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 427 - &

[3] MANY A, 1965, SEMICONDUCTOR SURFAC, P150

[4] EVIDENCE OF SURFACE ORIGIN OF 1/F NOISE [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (18) : 956 - +

[1] EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (09) : 344 - &

[2] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 427 - &

[3] MANY A, 1965, SEMICONDUCTOR SURFAC, P150

[4] EVIDENCE OF SURFACE ORIGIN OF 1/F NOISE [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (18) : 956 - +