PHOTOLUMINESCENCE STUDY OF MAGNESIUM DOPED MOVPE INDIUM-PHOSPHIDE

被引：5

作者：

BACHER, FR

LEIGH, WB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 80卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90097-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：456 / 458

页数：3

共 9 条

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[3]

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[5]

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[6] A STUDY OF P-TYPE DOPANTS FOR INP GROWN BY ADDUCT MOVPE [J].

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JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :102-110

[7] PHOTO-LUMINESCENCE FROM MG-IMPLANTED, EPITAXIAL, AND SEMI-INSULATING INP [J].

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PARK, YS ;

HENGEHOLD, RL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :969-977

[8] ELECTRON MOBILITIES AND PHOTOLUMINESCENCE OF SOLUTION GROWN INDIUMPHOSPHIDE SINGLE CRYSTALS [J].

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[9] A MODEL FOR THE - 1.10EV EMISSION BAND IN INP [J].

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