ELECTRICAL AND OPTICAL-PROPERTIES OF MG-DOPED, CA-DOPED, AND ZN-DOPED INP CRYSTALS GROWN BY THE SYNTHESIS, SOLUTE DIFFUSION TECHNIQUE

被引：43

作者：

KUBOTA, E ^{[1
]}

OHMORI, Y ^{[1
]}

SUGII, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3779 / 3784

页数：6

共 21 条

[1] DEPENDENCE OF GROWTH PROPERTIES OF SILICON-DOPED GAAS EPITAXIAL LAYERS UPON ORIENTATION [J].

AHN, BH ;

SHURTZ, RR ;

TRUSSELL, CW .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4512-&

[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[3] CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J].

BACHMANN, KJ ;

BUEHLER, E ;

MILLER, BI ;

MCFEE, JH ;

THIEL, FA .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) :137-150

[4] LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS [J].

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

STRNAD, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :389-406

[5]

BARTHRUFF D, 1979, J ELECTRON MATER, V8, P485, DOI 10.1007/BF02652400

[6] EXCITED-STATES OF SHALLOW ACCEPTORS IN INP [J].

BARTHRUFF, D ;

HASPEKLO, H .

JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) :181-184

[7] LPE GROWTH OF GAXIN1-XAS LAYERS ON INP UNDER PH3 PARTIAL-PRESSURE AND RESULTS ON MG-DOPING [J].

BENEKING, H ;

GROTE, N ;

SELDERS, J .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :59-63

[8] FAR-INFRARED PHOTOCONDUCTIVITY FROM SHALLOW DONORS IN N-INP [J].

CHAMBERL.JM ;

ERGUN, HB ;

GEHRING, KA ;

STRADLIN.RA .

SOLID STATE COMMUNICATIONS, 1971, 9 (18) :1563-&

[9] DYE-LASER SELECTIVE SPECTROSCOPY IN BULK-GROWN INDIUM-PHOSPHIDE [J].

DEAN, PJ ;

ROBBINS, DJ ;

BISHOP, SG .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (24) :5567-5575

[10] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

← 1 2 3 →