LPE GROWTH OF GAXIN1-XAS LAYERS ON INP UNDER PH3 PARTIAL-PRESSURE AND RESULTS ON MG-DOPING

被引：21

作者：

BENEKING, H

GROTE, N

SELDERS, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90249-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：59 / 63

页数：5

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