MG-DOPED INGAASP-INP LEDS FOR HIGH-BIT-RATE OPTICAL-COMMUNICATION SYSTEMS

被引:17
作者
GROTHE, H
PROEBSTER, W
HARTH, W
机构
[1] Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik, Technische Universität München, D-8000 München 2, W. Germany
关键词
Light-emitting diodes; Optical modulation;
D O I
10.1049/el:19790499
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design criteria for high-speed luminescent diodes are applied to realise InGaAsP/InP l.e.d.s at 1.26 µm wavelength. By highly doping the active region with Mg, a modulation bandwidth in excess of 1 GHz is achieved. © 1979, The Institution of Electrical Engineers. All rights reserved.
引用
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页码:702 / 703
页数:2
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