CONTROL OF SUBSTRATE DEGRADATION IN INP LPE GROWTH WITH PH3 PARTIAL-PRESSURE

被引：37

作者：

CLAWSON, AR

LUM, WY

MCWILLIAMS, GE

机构：

[1] Electronic Material Sciences Division, Naval Ocean Systems Center San Diego

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 02期

关键词：

D O I：

10.1016/0022-0248(79)90075-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The thermal degradation of polished single crystal InP substrate immediately prior to liquid phase epitaxial (LPE) growth of InP and lattice-matched InGaAsP layers in a graphite boat has been prevented by the introduction of phosphine (PH3) gas into the hydrogen ambient. The dependence of the degradation process has been determined to be a function of ambient temperature and of the partial pressure of PH3. © 1979.

引用

页码：300 / 303

页数：4

共 8 条

[1]

BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[2] EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LIQUID-PHASE EPITAXY [J].