INSITU IN ETCHING TECHNIQUE FOR LPE INP

被引:31
作者
WRICK, V
SCILLA, GJ
EASTMAN, LF
HENRY, RL
SWIGGARD, EM
机构
[1] CORNELL UNIV,ITHACA,NY 14853
[2] USN,RES LABS,WASHINGTON,DC 20375
关键词
D O I
10.1049/el:19760302
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:394 / 395
页数:2
相关论文
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    [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 189 - 196