NEW METHOD FOR LIQUID-PHASE EPITAXY

被引：4

作者：

STAREEV, GD ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL,SCI & PROD CTR SEMICOND,AL LOTNIKOW 32-46,02-668 WARSAW,POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 32卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90031-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：189 / 196

页数：8

相关论文

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[7] TEMPERATURE GRADIENT CELL FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS
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[8] HIGH PURITY GAAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY
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