ON PREPARATION OF EPITAXIAL FILMS OF III-V COMPOUNDS

[1] ANDERSON JC, 1966, USE THIN FILMS PHYSI

[2] GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (01) : 1 - &

[3] [Anonymous], 1928, B SOC FRAN MINER CRI

[4] ANTELL GR, 1962, COMPOUND SEMICONDUCT, V1, P288

[5] BARUA KC, 1967, INDIAN J PURE AP PHY, V5, P480

[6] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &

[7] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +

[8] CAMPBELL DS, 1966, USE THIN FILMS PHYSI, P11

[9] CONARD RW, 1967, SOLID STATE ELECTRON, V10, P507

[10] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1336 - &

[1] ANDERSON JC, 1966, USE THIN FILMS PHYSI

[2] GALLIUM ARSENITIDE OF HIGH MOBILITY OBTAINED BY EPITAXY IN LIQUID PHASE [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (01) : 1 - &

[3] [Anonymous], 1928, B SOC FRAN MINER CRI

[4] ANTELL GR, 1962, COMPOUND SEMICONDUCT, V1, P288

[5] BARUA KC, 1967, INDIAN J PURE AP PHY, V5, P480

[6] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &

[7] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +

[8] CAMPBELL DS, 1966, USE THIN FILMS PHYSI, P11

[9] CONARD RW, 1967, SOLID STATE ELECTRON, V10, P507

[10] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1336 - &